NTD18N06LT4G

NTD18N06LT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-NTD18N06LT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 4603
  • Description: NTD18N06LT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Rds On (Max) @ Id, Vgs 65m Ω @ 9A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 675pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Ta
Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V
Rise Time 79ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 18A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 15V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 54A
Avalanche Energy Rating (Eas) 72 mJ
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 54mOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 18A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 2.1W Ta 55W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 55W
Case Connection DRAIN
Turn On Delay Time 9.9 ns
FET Type N-Channel
Transistor Application SWITCHING

NTD18N06LT4G Description


NTD18N06LT4G belongs to the family of N-channel power MOSFETs manufactured by ON Semiconductor, which is specifically designed for low voltage, high-speed switching applications in power supplies, converters, and power motor controls and bridge circuits. It is available in the DPAK package which provides a space-saving function.



NTD18N06LT4G Features


  • Low on-state resistance

  • Low gate charge

  • High dv/dt capability

  • Fast switching speed

  • Available in the DPAK package



NTD18N06LT4G Applications


  • Converters

  • Bridge circuits

  • Power supplies

  • Power motor controls


In Stock

Please send RFQ , we will respond immediately.