NTB75N06LT4G

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 11m Ω @ 37.5A, 5V ±20V 4370pF @ 25V 92nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB


  • Manufacturer: ON Semiconductor
  • NO: 598-NTB75N06LT4G
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: pdf
  • Stock: 10695
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 11m Ω @ 37.5A, 5V ±20V 4370pF @ 25V 92nC @ 5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB (Kg)

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SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 75A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 2.4W Ta 214W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 214W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 37.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4370pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Ta
Gate Charge (Qg) (Max) @ Vgs 92nC @ 5V
Rise Time 265ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±20V
Fall Time (Typ) 170 ns
Turn-Off Delay Time 113 ns
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.011Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 225A
Avalanche Energy Rating (Eas) 844 mJ
RoHS Status RoHS Compliant
Lead Free Lead Free

In Stock

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