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ContactNTB5605PT4G
NTB5605PT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NTB5605PT4G
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 2393
- Description: NTB5605PT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 7 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Surface Mount | YES |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -60V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Current Rating | -18.5A |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 88W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 88W |
| Case Connection | DRAIN |
| Turn On Delay Time | 12.5 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 140m Ω @ 8.5A, 5V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1190pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 18.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 5V |
| Rise Time | 122ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 75 ns |
| Turn-Off Delay Time | 29 ns |
| Continuous Drain Current (ID) | 18.5A |
| Threshold Voltage | -1.5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -60V |
| Pulsed Drain Current-Max (IDM) | 55A |
| Height | 4.83mm |
| Length | 10.29mm |
| Width | 9.65mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NTB5605PT4G Description
NTB5605PT4G is a P-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 60V. The operating temperature of the NTB5605PT4G is -55°C~175°C TJ and its maximum power dissipation is 88W Tc. NTB5605PT4G has 3 pins and it is available in Tape & Reel (TR) packaging way. The Turn On Delay Time of NTB5605PT4G is 12.5 ns and its Turn-Off Delay Time is 29 ns.
NTB5605PT4G Features
Designed for Low RDS(on)
Withstands High Energy in Avalanche and Commutation Modes
AEC Q101 Qualified ? NTBV5605
These Devices are Pb?Free and are RoHS Compliant
NTB5605PT4G Applications
Power Supplies
PWM Motor Control
Converters
Power Management
