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NTB45N06LT4G
  • NTB45N06LT4G

NTB45N06LT4G

NTB45N06LT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-NTB45N06LT4G
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: pdf
  • Stock: 1447
  • Description: NTB45N06LT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Resistance 26MOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Powers
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 45A
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 2.4W Ta 125W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 125W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 22.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 45A Ta
Gate Charge (Qg) (Max) @ Vgs 32nC @ 5V
Rise Time 341ns
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
Fall Time (Typ) 158 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 45A
Gate to Source Voltage (Vgs) 15V
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 240 mJ
Height 4.83mm
Length 10.29mm
Width 9.65mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

NTB45N06LT4G Description


NTB45N06LT4G, designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.



NTB45N06LT4G Features


  • Higher Current Rating

  • Lower RDS(on)

  • Lower VDS(on)

  • Lower Capacitances

  • Lower Total Gate Charge

  • Tighter VSD Specification

  • Lower Diode Reverse Recovery Time

  • Lower Reverse Recovery Stored Charge

  • Pb?Free Packages are Available



NTB45N06LT4G Applications


  • Power Supplies

  • Converters

  • Power Motor Controls

  • Bridge Circuits

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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