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MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.8m Ω @ 41A, 10V ±20V 9080pF @ 25V 160nC @ 10V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Manufacturer: Renesas Electronics America
- NO: 668-NP82N03PUG-E1-AY
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 5591
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.8m Ω @ 41A, 10V ±20V 9080pF @ 25V 160nC @ 10V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB (Kg)
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In Stock
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Operating Temperature | 175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Configuration | Single |
| Power Dissipation-Max | 1.8W Ta 143W Tc |
| Turn On Delay Time | 39 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 2.8m Ω @ 41A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 9080pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 82A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 160nC @ 10V |
| Rise Time | 122ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 70 ns |
| Continuous Drain Current (ID) | 82A |
| Gate to Source Voltage (Vgs) | 20V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
