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MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 27m Ω @ 11.5A, 10V ±20V 1800pF @ 25V 41nC @ 10V 60V 8-SMD, Flat Lead Exposed Pad
- Manufacturer: Renesas Electronics America
- NO: 668-NP23N06YDG-E1-AY
- Package: 8-SMD, Flat Lead Exposed Pad
- Datasheet:
- Stock: 7500
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 27m Ω @ 11.5A, 10V ±20V 1800pF @ 25V 41nC @ 10V 60V 8-SMD, Flat Lead Exposed Pad (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead Exposed Pad |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | 175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-F5 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 1W Ta 60W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 12 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 27m Ω @ 11.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 23A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
| Rise Time | 6ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 4 ns |
| Turn-Off Delay Time | 36 ns |
| Continuous Drain Current (ID) | 23A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.037Ohm |
| DS Breakdown Voltage-Min | 60V |
| Feedback Cap-Max (Crss) | 130 pF |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
