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ContactNDT3055L
NDT3055L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NDT3055L
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 4393
- Description: NDT3055L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 100mOhm |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 3.5A |
| Number of Elements | 1 |
| Voltage | 40V |
| Power Dissipation-Max | 3W Ta |
| Element Configuration | Single |
| Current | 32A |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3W |
| Case Connection | DRAIN |
| Turn On Delay Time | 5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 4A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 345pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 4A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Rise Time | 7.5ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 7 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 4A |
| Threshold Voltage | 1.6V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Dual Supply Voltage | 60V |
| Nominal Vgs | 1.6 V |
| Height | 1.6mm |
| Length | 6.5mm |
| Width | 6.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
NDT3055L Description
The NDT3055L is an N-channel logic level enhancement mould MOSFET using high cell density, DMOS technology. This extremely high-density technology has been specifically designed to decrease on-state resistance, provide improved switching performance, and withstand high-energy pulses in avalanche and commutation modes. The onsemi NDT3055L is particularly suited for low voltage applications such as DC/DC converters, PWM motor controls, and other battery-powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDT3055L Features
In SOT-223-4 package
4 A, 60 V. RDS(ON)= 0.100 W @ VGS = 10 V,
RDS(ON)= 0.120 W @ VGS = 4.5 V.
Low drive requirements allow operation directly from logic drivers. VGS(TH) < 2V.
High-density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used surface mount package.
NDT3055L Applications
DC motor control
DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed
Power Management
Motor Drive & Control
Automotive
