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| Parameters | |
|---|---|
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Package / Case | SOT-23 |
| Number of Pins | 3 |
| Packaging | Cut Tape |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Moisture Sensitivity Level (MSL) | 1 |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 2Ohm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 60V |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 280mA |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Voltage | 60V |
| Power Dissipation-Max | 300mW |
| Element Configuration | Single |
| Current | 28A |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300mW |
| Turn On Delay Time | 20 ns |
| Voltage - Threshold | 2.1V |
| Transistor Application | SWITCHING |
| Drain to Source Voltage (Vdss) | 60V |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 280mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Dual Supply Voltage | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| Drain to Source Resistance | 1.2Ohm |
| Rds On Max | 2 Ω |
| Nominal Vgs | 2.1 V |
| Feedback Cap-Max (Crss) | 5 pF |
| Capacitance - Input | 50pF |
| Height | 1.11mm |
| Width | 3.05mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
NDS7002A Description
These N-channel enhancement mode field-effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low-voltage, low-cur-rent applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.
NDS7002A Features
High-Density Cell Design for Low RDS(ON)
Voltage Controlled Small Signal Switch
Rugged and Reliable
High Saturation Current Capability
