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NDS351N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NDS351N
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 5748
- Description: NDS351N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 160m Ω @ 1.4A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.1A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 3.5nC @ 5V |
| Rise Time | 16ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 26 ns |
| Continuous Drain Current (ID) | 1.1A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 1.1A |
| Number of Elements | 1 |
| Power Dissipation-Max | 500mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 500mW |
| Turn On Delay Time | 9 ns |
| FET Type | N-Channel |
NDS351N Description
These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits where fast switching and low in-line power loss are needed in a very small outline surface mount package.
NDS351N Features
1.1A, 30V. RDS(ON) = 0.25W @ VGS = 4.5V.
Proprietary package design using the copper lead frame for superior thermal and electrical capabilities.
High-density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Compact industry-standard SOT-23 surface-mount package.
NDS351N Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
