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| Parameters | |
|---|---|
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 162pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 4.5V |
| Rise Time | 25ns |
| Fall Time (Typ) | 5 ns |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 20V |
| Nominal Vgs | 700 mV |
| Current - Continuous Drain (Id) @ 25°C | 1.3A Ta |
| Drive Voltage (Max Rds On,Min Rds On) | 2.7V 4.5V |
| Vgs (Max) | ±8V |
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Published | 1998 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Length | 2.92mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Current Rating | 1.3A |
| Radiation Hardening | No |
| Number of Pins | 3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| REACH SVHC | No SVHC |
| Height | 1.22mm |
| Width | 1.4mm |
| Resistance | 160mOhm |
| Mounting Type | Surface Mount |
| Weight | 30mg |
| Operating Temperature | -55°C~150°C TJ |
| Voltage - Rated DC | 20V |
| Technology | MOSFET (Metal Oxide) |
| Operating Mode | ENHANCEMENT MODE |
| JESD-609 Code | e3 |
| Terminal Finish | Tin (Sn) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Channels | 1 |
| Subcategory | FET General Purpose Power |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 500mW |
| Turn On Delay Time | 5 ns |
| Threshold Voltage | 700mV |
| Power Dissipation-Max | 500mW Ta |
| Continuous Drain Current (ID) | 1.3A |
| Max Junction Temperature (Tj) | 150°C |
| Transistor Application | SWITCHING |
| Turn-Off Delay Time | 10 ns |
| Transistor Element Material | SILICON |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 160m Ω @ 1.5A, 4.5V |
Product Description:
The NDS331N is an N-channel MOSFET transistor designed for high-performance switching applications. With its low on-resistance, fast switching speed, and robust construction, this MOSFET is well-suited for various electronic circuits where efficient switching and power management are crucial.
Features:
N-Channel Enhancement Mode: The NDS331N operates in the enhancement mode, allowing it to function as a switch by applying a positive gate-source voltage.
Low On-Resistance: This MOSFET features a low on-resistance, which results in minimal voltage drop across the transistor when it's in the fully conducting state. This property reduces power dissipation and improves overall efficiency.
Fast Switching Speed: The NDS331N offers fast switching characteristics, making it suitable for applications that require rapid transitions between on and off states.
High Current Handling: With its low on-resistance and robust construction, the MOSFET can handle relatively high current levels, making it suitable for power management applications.
Low Gate Threshold Voltage: The low gate threshold voltage enables the NDS331N to be easily controlled by low-level voltage signals, enhancing its versatility in various circuit configurations.
Surface-Mount Package: The NDS331N is available in a surface-mount DPAK package, allowing for easy integration onto printed circuit boards.
RoHS Compliant: The transistor is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring its environmental and safety standards.
Applications:
Switching Circuits: The NDS331N is commonly used as a switch in various electronic circuits, including power supplies, motor control, and LED drivers.
DC-DC Converters: It can be used in DC-DC converter circuits to efficiently regulate and manage voltage levels.
Motor Control: The MOSFET is suitable for motor control applications, where it can be used to drive and control the speed of DC motors.
LED Drivers: It can be employed in LED driver circuits to control the current flowing through LEDs for efficient illumination.
Power Management: The NDS331N can be integrated into power management circuits, such as voltage regulation and load switching.
Battery Protection: It can be used in battery protection circuits to prevent overcharging or overdischarging of batteries.
Inverter Circuits: The MOSFET can be used in inverter circuits to convert DC power to AC power in applications like solar inverters.
Audio Amplifiers: It can be employed in audio amplifier circuits for efficient power switching.
Automotive Electronics: The NDS331N can be used in automotive electronics, including power distribution and control circuits.
In summary, the NDS331N N-channel MOSFET offers low on-resistance, fast switching, and high current handling, making it a versatile component for various electronic applications. Whether you're designing power supplies, motor control circuits, LED drivers, or other power management systems, this MOSFET contributes to efficient switching and enhanced performance.
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