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NDS0610 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NDS0610
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 2380
- Description: NDS0610 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | -120mA |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 360mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 360mW |
| Turn On Delay Time | 2.5 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 10 Ω @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 79pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 120mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 10V |
| Rise Time | 6.3ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 6.3 ns |
| Turn-Off Delay Time | 10 ns |
| Continuous Drain Current (ID) | -120mA |
| Threshold Voltage | -1.7V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -60V |
| Dual Supply Voltage | -60V |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | -1.7 V |
| Feedback Cap-Max (Crss) | 5 pF |
| Height | 1.11mm |
| Width | 3.05mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 10Ohm |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -60V |
The NDS0610 P-Channel enhancement mode field effect transistor is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 120mA DC and can deliver current up to 1A. This product is particularly suited to low voltage
applications requiring a low current high side switch.
NDS0610 Features
? ?0.12A, ?60V. RDS(ON) = 10 ? @ VGS = ?10 V
RDS(ON) = 20 ? @ VGS = ?4.5 V
? Voltage controlled p-channel small signal switch
? High density cell design for low RDS(ON)
? High saturation current
NDS0610 Applications
This product is general usage and suitable for many different applications.
