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| Parameters | |
|---|---|
| Factory Lead Time | 9 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~175°C TJ |
| Packaging | Tube |
| Published | 1998 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 13mOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 75A |
| Number of Elements | 1 |
| Power Dissipation-Max | 150W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 150W |
| Turn On Delay Time | 17 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 13m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3600pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 75A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 115nC @ 10V |
| Rise Time | 128ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 90 ns |
| Turn-Off Delay Time | 54 ns |
| Continuous Drain Current (ID) | 75A |
| Threshold Voltage | 2.8V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 225A |
| Avalanche Energy Rating (Eas) | 550 mJ |
| Nominal Vgs | 2.8 V |
| Height | 16.3mm |
| Length | 10.67mm |
| Width | 4.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 550 mJ.A device's maximal input capacitance is 3600pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 75A. At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.It is [54 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Its maximum pulsed drain current is 225A, which is also its maximum rating peak drainage current.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 17 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 2.8V.Its overall power consumption can be reduced by using drive voltage (10V).
the avalanche energy rating (Eas) is 550 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 225A.
a threshold voltage of 2.8V
There are a lot of ON Semiconductor NDP7060 applications of single MOSFETs transistors.
DC/DC converters
LCD/LED/ PDP TV Lighting
Motor Drives and Uninterruptible Power Supples
LCD/LED TV
Consumer Appliances
Server power supplies
Industrial Power Supplies
Synchronous Rectification
Motor control
Synchronous Rectification for ATX 1 Server I Telecom PSU
Please send RFQ , we will respond immediately.