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ContactNDP6020P
NDP6020P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NDP6020P
- Package: TO-220-3
- Datasheet:
- Stock: 7538
- Description: NDP6020P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~175°C TJ |
| Packaging | Tube |
| Published | 1998 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 50mOhm |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -20V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | -24A |
| Number of Elements | 1 |
| Power Dissipation-Max | 60W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 60W |
| Turn On Delay Time | 15 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 50m Ω @ 12A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1590pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 24A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 5V |
| Rise Time | 27ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 70 ns |
| Turn-Off Delay Time | 120 ns |
| Continuous Drain Current (ID) | -24A |
| Threshold Voltage | -700mV |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | -20V |
| Pulsed Drain Current-Max (IDM) | 70A |
| Height | 16.3mm |
| Length | 10.67mm |
| Width | 4.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
The NDP6020P is a P-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. This device is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDP6020P Features
-24 A, -20 V. RDS(ON)= 0.05 W @ VGS= -4.5 V.
RDS(ON)= 0.07W @ VGS= -2.7 V.
RDS(ON)= 0.075 W @ VGS= -2.5 V.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDP6020P Applications
Automotive,
Power Management,
Motor Drive & Control
Data center & enterprise computing
Enterprise machine
