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ContactNDD03N80ZT4G
NDD03N80ZT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-NDD03N80ZT4G
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 259
- Description: NDD03N80ZT4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 9 Weeks |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 3 days ago) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 96W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 96W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 4.5 Ω @ 1.2A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Rise Time | 7ns |
| Drain to Source Voltage (Vdss) | 800V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 9 ns |
| Turn-Off Delay Time | 17 ns |
| Continuous Drain Current (ID) | 2.9A |
| Gate to Source Voltage (Vgs) | 30V |
| DS Breakdown Voltage-Min | 800V |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
NDD03N80ZT4G Description
This NDD03N80Z is a Power MOSFET 800V 2.9A 4.5 Ohm Single N-Channel device with DPAK package. The operating temperature of the NDD03N80ZT4G is -55??C~150??C TJ and its maximum power dissipation is 96W Tc. NDD03N80ZT4G has 4 pins and it is available in Tape & Reel (TR) packaging way. The Drain to Source Voltage (Vdss) of NDD03N80ZT4G is 800V.
NDD03N80ZT4G Features
ESD Diode?Protected Gate
100% Avalanche Tested
100% Rg Tested
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
NDD03N80ZT4G Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
