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ContactNDBA180N10BT4H
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.8m Ω @ 50A, 15V ±20V 6950pF @ 50V 95nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Manufacturer: ON Semiconductor
- NO: 598-NDBA180N10BT4H
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 8726
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.8m Ω @ 50A, 15V ±20V 6950pF @ 50V 95nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 4 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | 175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2016 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | ULTRA LOW RESISTANCE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 200W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 95 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.8m Ω @ 50A, 15V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 6950pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 180A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 95nC @ 10V |
| Rise Time | 320ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V 15V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 130 ns |
| Turn-Off Delay Time | 185 ns |
| Continuous Drain Current (ID) | 180A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 100A |
| Pulsed Drain Current-Max (IDM) | 600A |
| DS Breakdown Voltage-Min | 100V |
| Avalanche Energy Rating (Eas) | 451 mJ |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
