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NDB5060L
  • NDB5060L

NDB5060L

NDB5060L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-NDB5060L
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: pdf
  • Stock: 5958
  • Description: NDB5060L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Operating Mode ENHANCEMENT MODE
Power Dissipation 68W
Case Connection DRAIN
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 840pF @ 30V
Current - Continuous Drain (Id) @ 25°C 26A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 5V
Rise Time 200ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 102 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 26A
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.05Ohm
Drain to Source Breakdown Voltage 60V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~175°C TJ
Packaging Tape & Reel (TR)
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 26A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Voltage 60V
Power Dissipation-Max 68W Tc
Element Configuration Single
Current 26A

NDB5060L Description


NDB5060L is a type of N-channel logic-level enhancement-mode field-effect transistor provided by ON Semiconductor based on its proprietary, high cell density, DMOS technology which makes this device capable of minimizing on-state resistance, delivering advanced switching performance, and withstanding high energy pulse. It is well suited for low-voltage applications including DC/DC converters and high-efficiency switching circuits requiring low in-line power loss and resistance to transients.



NDB5060L Features


  • Proprietary, high cell density, DMOS technology

  • Low RDS (on)

  • High-density cell design

  • Low on-state resistance

  • Available in the TO-263AB package



NDB5060L Applications


  • Automotive

  • DC/DC converters

  • PWM motor controls

  • High-efficiency switching circuits


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