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MMSF3P02HDR2G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMSF3P02HDR2G
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 1793
- Description: MMSF3P02HDR2G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
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| Parameters | |
|---|---|
| Pin Count | 8 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.5W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 25 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 75m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 16V |
| Current - Continuous Drain (Id) @ 25°C | 5.6A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
| Rise Time | 40ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 97 ns |
| Turn-Off Delay Time | 110 ns |
| Continuous Drain Current (ID) | 5.6A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -20V |
| Pulsed Drain Current-Max (IDM) | 30A |
| Avalanche Energy Rating (Eas) | 567 mJ |
| Nominal Vgs | 1.5 V |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 27 Weeks |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 75MOhm |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -20V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -3A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
MMSF3P02HDR2G Description
These miniature surface mount MOSFET MMSF3P02HDR2G have ultra-low RDS (conduction) and true logic level performance. They can withstand high energy in avalanche and rectifier modes, drain-to-source diodes have very low reverse recovery time. These devices are designed for low-voltage, high-speed switching applications, in which power efficiency is very important. Typical applications are DC-DC converters, as well as power management in portable and battery-powered products such as computers, printers, cellular phones and cordless phones. They can also be used for low-voltage motor control in mass storage products such as disk drives and tape drives. Avalanche energy is specified to eliminate guesswork in the design of switching inductive loads and to provide additional safety margin for unexpected voltage transients.
MMSF3P02HDR2G Features
? Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
? Logic Level Gate Drive ? Can Be Driven by Logic ICs
? Miniature SO?8 Surface Mount Package ? Saves Board Space
? Diode Is Characterized for Use In Bridge Circuits
? Diode Exhibits High Speed, With Soft Recovery
? IDSS Specified at Elevated Temperature
? Avalanche Energy Specified
? Mounting Information for SO?8 Package Provided
? This is a Pb?Free Device
MMSF3P02HDR2G Applications
DC-DC converters
power management
