MMIX1F160N30T

MOSFET (Metal Oxide) N-Channel Tube 20m Ω @ 60A, 10V ±20V 2800pF @ 25V 335nC @ 10V 300V 24-PowerSMD, 21 Leads


  • Manufacturer: IXYS
  • NO: 415-MMIX1F160N30T
  • Package: 24-PowerSMD, 21 Leads
  • Datasheet: pdf
  • Stock: 4064
  • Description: MOSFET (Metal Oxide) N-Channel Tube 20m Ω @ 60A, 10V ±20V 2800pF @ 25V 335nC @ 10V 300V 24-PowerSMD, 21 Leads (Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

Please send RFQ , we will respond immediately.

authentication (1) authentication (2) authentication (3) authentication (4) authentication (5) authentication (6) authentication (7) authentication (8) authentication (9)

Purchase & Inquiry

Transport

User guide

Purchase

You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Gate Charge (Qg) (Max) @ Vgs 335nC @ 10V
Drain to Source Voltage (Vdss) 300V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 102A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.02Ohm
Pulsed Drain Current-Max (IDM) 440A
DS Breakdown Voltage-Min 300V
Avalanche Energy Rating (Eas) 3000 mJ
Height 5.7mm
Length 25.25mm
Width 23.25mm
RoHS Status ROHS3 Compliant
Factory Lead Time 30 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 24-PowerSMD, 21 Leads
Number of Pins 21
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series GigaMOS™, HiPerFET™, TrenchT2™
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 21
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Pin Count 21
Number of Elements 1
Power Dissipation-Max 570W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 570W
Case Connection ISOLATED
Turn On Delay Time 34 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 102A Tc

In Stock

Please send RFQ , we will respond immediately.