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MMBF170LT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-MMBF170LT1G
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 390
- Description: MMBF170LT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Length | 2.9mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Current Rating | 500mA |
| Radiation Hardening | No |
| Number of Pins | 3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| REACH SVHC | No SVHC |
| Height | 940μm |
| Width | 1.3mm |
| Resistance | 5Ohm |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C TJ |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Operating Mode | ENHANCEMENT MODE |
| JESD-609 Code | e3 |
| Terminal Finish | Tin (Sn) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 3 |
| Surface Mount | YES |
| Subcategory | FET General Purpose Powers |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 225mW |
| Turn On Delay Time | 10 ns |
| Threshold Voltage | 3V |
| Power Dissipation-Max | 225mW Ta |
| Continuous Drain Current (ID) | 500mA |
| Transistor Application | SWITCHING |
| Turn-Off Delay Time | 10 ns |
| Transistor Element Material | SILICON |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 5 Ω @ 200mA, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 10V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Nominal Vgs | 3 V |
| Drain Current-Max (Abs) (ID) | 0.5A |
| Current - Continuous Drain (Id) @ 25°C | 500mA Ta |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
MMBF170LT1G Description
This FPCN announces the planned capacity expansion of ON Semiconductor's wafer operations of
TMOS7 products to their facility in Niigata Japan. Upon the expiration of this FPCN, TMOS7 devices
may be processed at either Niigata or existing location. These products have been qualified to commodity/commercial requirements.
These products will continue being Pb-free, Halide free and RoHS compliant.
MMBF170LT1G Features
NVBF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC?Q101
Qualified and PPAP Capable
These Devices are Pb?Free and are RoHS Compliant
