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ContactJANTXV2N7224U
MOSFET (Metal Oxide) N-Channel Bulk 81m Ω @ 34A, 10V ±20V 125nC @ 10V 100V TO-267AB
- Manufacturer: Microsemi Corporation
- NO: 523-JANTXV2N7224U
- Package: TO-267AB
- Datasheet:
- Stock: 4719
- Description: MOSFET (Metal Oxide) N-Channel Bulk 81m Ω @ 34A, 10V ±20V 125nC @ 10V 100V TO-267AB (Kg)
- Delivery:
- Payment:
In Stock
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Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-267AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Series | Military, MIL-PRF-19500/592 |
| Published | 1997 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Additional Feature | HIGH RELIABILITY |
| HTS Code | 8541.29.00.95 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Pin Count | 3 |
| Reference Standard | MIL-19500/592 |
| Qualification Status | Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 4W Ta 150W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 35 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 81m Ω @ 34A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Current - Continuous Drain (Id) @ 25°C | 34A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 125nC @ 10V |
| Rise Time | 190ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 130 ns |
| Turn-Off Delay Time | 170 ns |
| Continuous Drain Current (ID) | 34A |
| JEDEC-95 Code | TO-276AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.081Ohm |
| DS Breakdown Voltage-Min | 100V |
| Avalanche Energy Rating (Eas) | 150 mJ |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
