JANTX2N6796U

MOSFET (Metal Oxide) N-Channel Bulk 195m Ω @ 8A, 10V ±20V 28.51nC @ 10V 100V 18-CLCC


  • Manufacturer: Microsemi Corporation
  • NO: 523-JANTX2N6796U
  • Package: 18-CLCC
  • Datasheet: pdf
  • Stock: 13366
  • Description: MOSFET (Metal Oxide) N-Channel Bulk 195m Ω @ 8A, 10V ±20V 28.51nC @ 10V 100V 18-CLCC (Kg)

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SPECIFICATIONS

Parameters
Series Military, MIL-PRF-19500/557
Published 1997
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 15
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Position QUAD
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 16
Reference Standard MIL-19500/557
JESD-30 Code R-CQCC-N15
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 800mW Ta 25W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 25W
Case Connection SOURCE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 195m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 28.51nC @ 10V
Rise Time 75ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8A
Drain-source On Resistance-Max 0.195Ohm
Pulsed Drain Current-Max (IDM) 32A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 134 mJ
RoHS Status Non-RoHS Compliant
Contact Plating Lead, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 18-CLCC
Number of Pins 18
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk

In Stock

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