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MOSFET (Metal Oxide) N-Channel Bulk 90m Ω @ 30A, 10V ±20V 115nC @ 10V 200V TO-254-3, TO-254AA (Straight Leads)
- Manufacturer: Microsemi Corporation
- NO: 523-JANTX2N6766T1
- Package: TO-254-3, TO-254AA (Straight Leads)
- Datasheet:
- Stock: 13462
- Description: MOSFET (Metal Oxide) N-Channel Bulk 90m Ω @ 30A, 10V ±20V 115nC @ 10V 200V TO-254-3, TO-254AA (Straight Leads) (Kg)
- Delivery:
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In Stock
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| Parameters | |
|---|---|
| Drain-source On Resistance-Max | 0.065Ohm |
| DS Breakdown Voltage-Min | 200V |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-254-3, TO-254AA (Straight Leads) |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Series | Military, MIL-PRF-19500/543 |
| Published | 1997 |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | PIN/PEG |
| Pin Count | 3 |
| Qualification Status | Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 4W Ta 150W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | ISOLATED |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 90m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Current - Continuous Drain (Id) @ 25°C | 30A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 115nC @ 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 30A |
| Gate to Source Voltage (Vgs) | 20V |
