IXTX550N055T2

MOSFET (Metal Oxide) N-Channel Tube 1.6m Ω @ 100A, 10V ±20V 40000pF @ 25V 595nC @ 10V TO-247-3


  • Manufacturer: IXYS
  • NO: 415-IXTX550N055T2
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 7506
  • Description: MOSFET (Metal Oxide) N-Channel Tube 1.6m Ω @ 100A, 10V ±20V 40000pF @ 25V 595nC @ 10V TO-247-3 (Kg)

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SPECIFICATIONS

Parameters
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Output Voltage 55V
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1250W Tc
Nominal Supply Current 200A
Operating Mode ENHANCEMENT MODE
Output Current 550A
Case Connection DRAIN
Turn On Delay Time 45 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 40000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 550A Tc
Gate Charge (Qg) (Max) @ Vgs 595nC @ 10V
Rise Time 40ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 230 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 550A
Avalanche Energy Rating (Eas) 3000 mJ
Number of Drivers 1
RoHS Status ROHS3 Compliant
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 247
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series FRFET®, SupreMOS®
Published 2009
JESD-609 Code e1
Pbfree Code yes

In Stock

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