IXTT20N50D

MOSFET (Metal Oxide) N-Channel Tube 330m Ω @ 10A, 10V ±30V 2500pF @ 25V 125nC @ 10V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA


  • Manufacturer: IXYS
  • NO: 415-IXTT20N50D
  • Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Datasheet: pdf
  • Stock: 15031
  • Description: MOSFET (Metal Oxide) N-Channel Tube 330m Ω @ 10A, 10V ±30V 2500pF @ 25V 125nC @ 10V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA (Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 24 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Resistance 330mOhm
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 400W Tc
Element Configuration Single
Power Dissipation 400W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 330m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250mA
Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V
Rise Time 85ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 75 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 20A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 50A
FET Feature Depletion Mode
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.