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ContactIXTP6N100D2
MOSFET (Metal Oxide) N-Channel Tube 2.2 Ω @ 3A, 0V ±20V 2650pF @ 25V 95nC @ 5V 1000V TO-220-3
- Manufacturer: IXYS
- NO: 415-IXTP6N100D2
- Package: TO-220-3
- Datasheet:
- Stock: 841
- Description: MOSFET (Metal Oxide) N-Channel Tube 2.2 Ω @ 3A, 0V ±20V 2650pF @ 25V 95nC @ 5V 1000V TO-220-3 (Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 24 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2009 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 300W Tc |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.2 Ω @ 3A, 0V |
| Input Capacitance (Ciss) (Max) @ Vds | 2650pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 6A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 95nC @ 5V |
| Drain to Source Voltage (Vdss) | 1000V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 6A |
| JEDEC-95 Code | TO-220AB |
| FET Feature | Depletion Mode |
| RoHS Status | ROHS3 Compliant |
