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ContactIXTK5N250
MOSFET (Metal Oxide) N-Channel Tube 8.8 Ω @ 2.5A, 10V ±30V 8560pF @ 25V 200nC @ 10V 2500V TO-264-3, TO-264AA
- Manufacturer: IXYS
- NO: 415-IXTK5N250
- Package: TO-264-3, TO-264AA
- Datasheet:
- Stock: 2511
- Description: MOSFET (Metal Oxide) N-Channel Tube 8.8 Ω @ 2.5A, 10V ±30V 8560pF @ 25V 200nC @ 10V 2500V TO-264-3, TO-264AA (Kg)
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In Stock
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| Parameters | |
|---|---|
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8.8 Ω @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Input Capacitance (Ciss) (Max) @ Vds | 8560pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 200nC @ 10V |
| Drain to Source Voltage (Vdss) | 2500V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Continuous Drain Current (ID) | 5A |
| Drain Current-Max (Abs) (ID) | 5A |
| Pulsed Drain Current-Max (IDM) | 20A |
| DS Breakdown Voltage-Min | 2500V |
| Avalanche Energy Rating (Eas) | 2500 mJ |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2010 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 960W Tc |
| Operating Mode | ENHANCEMENT MODE |
