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ContactIXTK120P20T
MOSFET (Metal Oxide) P-Channel Tube 30m Ω @ 60A, 10V 73000pF @ 25V 740nC @ 10V 200V TO-264-3, TO-264AA
- Manufacturer: IXYS
- NO: 415-IXTK120P20T
- Package: TO-264-3, TO-264AA
- Datasheet:
- Stock: 3
- Description: MOSFET (Metal Oxide) P-Channel Tube 30m Ω @ 60A, 10V 73000pF @ 25V 740nC @ 10V 200V TO-264-3, TO-264AA (Kg)
- Delivery:
- Payment:
In Stock
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The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 28 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Transistor Element Material | SILICON |
| Packaging | Tube |
| Series | TrenchP™ |
| Published | 2013 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Subcategory | Other Transistors |
| Max Power Dissipation | 1.04kW |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 30m Ω @ 60A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 73000pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 120A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 740nC @ 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Continuous Drain Current (ID) | 120A |
| Drain-source On Resistance-Max | 0.03Ohm |
| Pulsed Drain Current-Max (IDM) | 400A |
| DS Breakdown Voltage-Min | 200V |
| Avalanche Energy Rating (Eas) | 3000 mJ |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
