IXTA130N065T2

MOSFET (Metal Oxide) N-Channel Tube 6.6m Ω @ 50A, 10V ±20V 4800pF @ 25V 79nC @ 10V 65V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB


  • Manufacturer: IXYS
  • NO: 415-IXTA130N065T2
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: pdf
  • Stock: 11149
  • Description: MOSFET (Metal Oxide) N-Channel Tube 6.6m Ω @ 50A, 10V ±20V 4800pF @ 25V 79nC @ 10V 65V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB (Kg)

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SPECIFICATIONS

Parameters
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series TrenchT2™
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 250W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.6m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V
Current - Continuous Drain (Id) @ 25°C 130A Tc
Gate Charge (Qg) (Max) @ Vgs 79nC @ 10V
Drain to Source Voltage (Vdss) 65V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 130A
Drain-source On Resistance-Max 0.0066Ohm
Pulsed Drain Current-Max (IDM) 330A
DS Breakdown Voltage-Min 65V
Avalanche Energy Rating (Eas) 600 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 24 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON

In Stock

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