IXTA02N450HV

MOSFET (Metal Oxide) N-Channel Tube 750 Ω @ 10mA, 10V ±20V 256pF @ 25V 10.4nC @ 10V 4500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB


  • Manufacturer: IXYS
  • NO: 415-IXTA02N450HV
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: pdf
  • Stock: 5302
  • Description: MOSFET (Metal Oxide) N-Channel Tube 750 Ω @ 10mA, 10V ±20V 256pF @ 25V 10.4nC @ 10V 4500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB (Kg)

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  • Delivery: Delivery
  • Payment: payment

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2012
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 113W Tc
Element Configuration Single
Power Dissipation 113W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 750 Ω @ 10mA, 10V
Vgs(th) (Max) @ Id 6.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 256pF @ 25V
Current - Continuous Drain (Id) @ 25°C 200mA Tc
Gate Charge (Qg) (Max) @ Vgs 10.4nC @ 10V
Rise Time 48ns
Drain to Source Voltage (Vdss) 4500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 143 ns
Turn-Off Delay Time 28 ns
Continuous Drain Current (ID) 200mA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.2A
Drain to Source Breakdown Voltage 4.5kV
RoHS Status RoHS Compliant

In Stock

Please send RFQ , we will respond immediately.