IXFX94N50P2

MOSFET (Metal Oxide) N-Channel Tube 55m Ω @ 500mA, 10V ±30V 13700pF @ 25V 220nC @ 10V TO-247-3


  • Manufacturer: IXYS
  • NO: 415-IXFX94N50P2
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 7455
  • Description: MOSFET (Metal Oxide) N-Channel Tube 55m Ω @ 500mA, 10V ±30V 13700pF @ 25V 220nC @ 10V TO-247-3 (Kg)

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SPECIFICATIONS

Parameters
Packaging Tube
Published 2010
Series HiPerFET™, PolarHV™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3kW
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 55m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 13700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 94A Tc
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Continuous Drain Current (ID) 94A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.055Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 240A
Avalanche Energy Rating (Eas) 3500 mJ
RoHS Status ROHS3 Compliant
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 247
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ

In Stock

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