IXFN82N60Q3

MOSFET (Metal Oxide) N-Channel Tube 75m Ω @ 41A, 10V ±30V 13500pF @ 25V 275nC @ 10V SOT-227-4, miniBLOC


  • Manufacturer: IXYS
  • NO: 415-IXFN82N60Q3
  • Package: SOT-227-4, miniBLOC
  • Datasheet: pdf
  • Stock: 23
  • Description: MOSFET (Metal Oxide) N-Channel Tube 75m Ω @ 41A, 10V ±30V 13500pF @ 25V 275nC @ 10V SOT-227-4, miniBLOC (Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 30 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Additional Feature UL RECOGNIZED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Reach Compliance Code unknown
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 960W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 960W
Case Connection ISOLATED
Turn On Delay Time 40 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 41A, 10V
Vgs(th) (Max) @ Id 6.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 13500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 66A Tc
Gate Charge (Qg) (Max) @ Vgs 275nC @ 10V
Rise Time 300ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 66A
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.0075Ohm
Drain to Source Breakdown Voltage 600V
Height 9.6mm
Length 38.23mm
Width 25.07mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

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