IXFN32N100P

MOSFET (Metal Oxide) N-Channel Tube 320mOhm @ 16A, 10V ±30V 14200pF @ 25V 225nC @ 10V 1000V SOT-227-4, miniBLOC


  • Manufacturer: IXYS
  • NO: 415-IXFN32N100P
  • Package: SOT-227-4, miniBLOC
  • Datasheet: pdf
  • Stock: 8301
  • Description: MOSFET (Metal Oxide) N-Channel Tube 320mOhm @ 16A, 10V ±30V 14200pF @ 25V 225nC @ 10V 1000V SOT-227-4, miniBLOC (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Drain to Source Resistance 320mOhm
Rds On Max 320 mΩ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 30 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Supplier Device Package SOT-227B
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series Polar™
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 320mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 690W Tc
Power Dissipation 690W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 320mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 14200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 27A Tc
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
Rise Time 55ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 43 ns
Turn-Off Delay Time 76 ns
Continuous Drain Current (ID) 27A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 1kV
Input Capacitance 14.2nF

In Stock

Please send RFQ , we will respond immediately.