IXFN106N20

MOSFET (Metal Oxide) N-Channel Tube 20mOhm @ 500mA, 10V ±20V 9000pF @ 25V 380nC @ 10V 200V SOT-227-4, miniBLOC


  • Manufacturer: IXYS
  • NO: 415-IXFN106N20
  • Package: SOT-227-4, miniBLOC
  • Datasheet: pdf
  • Stock: 12794
  • Description: MOSFET (Metal Oxide) N-Channel Tube 20mOhm @ 500mA, 10V ±20V 9000pF @ 25V 380nC @ 10V 200V SOT-227-4, miniBLOC (Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 8 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Supplier Device Package SOT-227B
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series HiPerFET™
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) Not Applicable
Resistance 20MOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Current Rating 106A
Number of Elements 1
Power Dissipation-Max 521W Tc
Power Dissipation 520W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 20mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 9000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 106A Tc
Gate Charge (Qg) (Max) @ Vgs 380nC @ 10V
Rise Time 80ns
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 106A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Input Capacitance 9nF
Drain to Source Resistance 20mOhm
Rds On Max 20 mΩ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.