IXFK98N50P3

MOSFET (Metal Oxide) N-Channel Tube 50m Ω @ 500mA, 10V ±30V 13100pF @ 25V 197nC @ 10V TO-264-3, TO-264AA


  • Manufacturer: IXYS
  • NO: 415-IXFK98N50P3
  • Package: TO-264-3, TO-264AA
  • Datasheet: pdf
  • Stock: 2469
  • Description: MOSFET (Metal Oxide) N-Channel Tube 50m Ω @ 500mA, 10V ±30V 13100pF @ 25V 197nC @ 10V TO-264-3, TO-264AA (Kg)

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SPECIFICATIONS

Parameters
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.05Ohm
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 245A
Avalanche Energy Rating (Eas) 2000 mJ
Height 26.16mm
Length 19.96mm
Width 5.13mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™, Polar3™
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Reach Compliance Code unknown
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.3kW
Case Connection DRAIN
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 13100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 98A Tc
Gate Charge (Qg) (Max) @ Vgs 197nC @ 10V
Rise Time 8ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 98A

In Stock

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