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ContactIXFH50N30Q3
MOSFET (Metal Oxide) N-Channel Tube 80m Ω @ 25A, 10V ±20V 3160pF @ 25V 65nC @ 10V TO-247-3
- Manufacturer: IXYS
- NO: 415-IXFH50N30Q3
- Package: TO-247-3
- Datasheet:
- Stock: 11142
- Description: MOSFET (Metal Oxide) N-Channel Tube 80m Ω @ 25A, 10V ±20V 3160pF @ 25V 65nC @ 10V TO-247-3 (Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2011 |
| Series | HiPerFET™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Reach Compliance Code | unknown |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 690W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 690W |
| Case Connection | DRAIN |
| Turn On Delay Time | 14 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 80m Ω @ 25A, 10V |
| Vgs(th) (Max) @ Id | 6.5V @ 4mA |
| Input Capacitance (Ciss) (Max) @ Vds | 3160pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 50A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
| Rise Time | 250ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 24 ns |
| Continuous Drain Current (ID) | 50A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.08Ohm |
| Drain to Source Breakdown Voltage | 300V |
| Height | 16.26mm |
| Length | 16.26mm |
| Width | 5.3mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 30 Weeks |
