IXFH42N60P3

MOSFET (Metal Oxide) N-Channel Tube 185m Ω @ 500mA, 10V ±30V 5150pF @ 25V 78nC @ 10V TO-247-3


  • Manufacturer: IXYS
  • NO: 415-IXFH42N60P3
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 3
  • Description: MOSFET (Metal Oxide) N-Channel Tube 185m Ω @ 500mA, 10V ±30V 5150pF @ 25V 78nC @ 10V TO-247-3 (Kg)

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Shipping Cost

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™, Polar3™
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Reach Compliance Code unknown
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 830W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 830W
Case Connection DRAIN
Turn On Delay Time 32 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 185m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 5150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Rise Time 23ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 42A
Threshold Voltage 4.5V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.185Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 100A
Height 21.46mm
Length 16.26mm
Width 5.3mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

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