IXFH16N120P

MOSFET (Metal Oxide) N-Channel Tube 950m Ω @ 8A, 10V ±30V 6900pF @ 25V 120nC @ 10V 1200V TO-247-3


  • Manufacturer: IXYS
  • NO: 415-IXFH16N120P
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 29730
  • Description: MOSFET (Metal Oxide) N-Channel Tube 950m Ω @ 8A, 10V ±30V 6900pF @ 25V 120nC @ 10V 1200V TO-247-3 (Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

In Stock

Please send RFQ , we will respond immediately.

authentication (1) authentication (2) authentication (3) authentication (4) authentication (5) authentication (6) authentication (7) authentication (8) authentication (9)

Purchase & Inquiry

Transport

User guide

Purchase

You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you can track your order in real time.

Means of Payment

For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.

RFQ (Request for Quotations)

It is recommended to request for quotations to get the latest prices and inventories about the part.
Our sales will reply to your request by email within 24 hours.

IMPORTANT NOTICE

1. You'll receive an order information email in your inbox. (Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some extent, the sales manager is going to reconfirm the order and let you know if there are any updates.

Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™, PolarP2™
Published 2012
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 660W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 660W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 950m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 6900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 28ns
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 66 ns
Continuous Drain Current (ID) 16A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.95Ohm
Drain to Source Breakdown Voltage 1.2kV
Pulsed Drain Current-Max (IDM) 35A
Avalanche Energy Rating (Eas) 800 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.