IXFH13N80

MOSFET (Metal Oxide) N-Channel Tube 800m Ω @ 500mA, 10V ±20V 4200pF @ 25V 155nC @ 10V TO-247-3


  • Manufacturer: IXYS
  • NO: 415-IXFH13N80
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 25
  • Description: MOSFET (Metal Oxide) N-Channel Tube 800m Ω @ 500mA, 10V ±20V 4200pF @ 25V 155nC @ 10V TO-247-3 (Kg)

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2000
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
Resistance 800mOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 800V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 13A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 300W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 300W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 800m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 155nC @ 10V
Rise Time 33ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 32 ns
Turn-Off Delay Time 63 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 800V
Pulsed Drain Current-Max (IDM) 52A
Recovery Time 250 ns
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.