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MOSFET (Metal Oxide) N-Channel Tube 220m Ω @ 22A, 10V ±30V 13600pF @ 25V 264nC @ 10V 1000V TO-264-3, TO-264AA
- Manufacturer: IXYS
- NO: 415-IXFB44N100Q3
- Package: TO-264-3, TO-264AA
- Datasheet:
- Stock: 177
- Description: MOSFET (Metal Oxide) N-Channel Tube 220m Ω @ 22A, 10V ±30V 13600pF @ 25V 264nC @ 10V 1000V TO-264-3, TO-264AA (Kg)
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| Parameters | |
|---|---|
| Drain to Source Breakdown Voltage | 1kV |
| Pulsed Drain Current-Max (IDM) | 110A |
| Avalanche Energy Rating (Eas) | 4000 mJ |
| Height | 26.59mm |
| Length | 20.29mm |
| Width | 5.31mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 20 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Number of Pins | 264 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | HiPerFET™ |
| Published | 2011 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Resistance | 220MOhm |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Pin Count | 3 |
| JESD-30 Code | R-PSIP-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 1560W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.56kW |
| Case Connection | DRAIN |
| Turn On Delay Time | 48 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 220m Ω @ 22A, 10V |
| Vgs(th) (Max) @ Id | 6.5V @ 8mA |
| Input Capacitance (Ciss) (Max) @ Vds | 13600pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 44A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 264nC @ 10V |
| Rise Time | 300ns |
| Drain to Source Voltage (Vdss) | 1000V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Turn-Off Delay Time | 66 ns |
| Continuous Drain Current (ID) | 44A |
| Gate to Source Voltage (Vgs) | 30V |
