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IRLZ34NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRLZ34NPBF
- Package: TO-220-3
- Datasheet:
- Stock: 1089
- Description: IRLZ34NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 35mOhm |
| Additional Feature | AVALANCHE RATED |
| Voltage - Rated DC | 55V |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | 250 |
| Current Rating | 30A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Lead Pitch | 2.54mm |
| Number of Elements | 1 |
| Power Dissipation-Max | 68W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 56W |
| Case Connection | DRAIN |
| Turn On Delay Time | 8.9 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 35m Ω @ 16A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 880pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 30A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 5V |
| Rise Time | 100ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 29 ns |
| Turn-Off Delay Time | 21 ns |
| Continuous Drain Current (ID) | 30A |
| Threshold Voltage | 2V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 16V |
| Drain to Source Breakdown Voltage | 55V |
| Dual Supply Voltage | 55V |
| Recovery Time | 110 ns |
| Nominal Vgs | 2 V |
| Height | 8.77mm |
| Length | 10.5156mm |
| Width | 4.69mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 1997 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
IRLZ34NPBF Description
The IRLZ34NPBF is a 55v N-channel HEXFET? Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor IRLZ34NPBF is in the TO-220-3 package with 56W power dissipation.
IRLZ34NPBF Features
Logic-Level Gate Drive
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
IRLZ34NPBF Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
Railway traction which is mostly through d.c. drives
And many loads which may have to be frequently switched
