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ContactIRLS4030TRLPBF
IRLS4030TRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRLS4030TRLPBF
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 6369
- Description: IRLS4030TRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Height | 4.572mm |
| Length | 10.668mm |
| Width | 9.65mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 3.9MOhm |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 370W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 370W |
| Turn On Delay Time | 74 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.3m Ω @ 110A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 11360pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 180A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 4.5V |
| Rise Time | 330ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 170 ns |
| Turn-Off Delay Time | 110 ns |
| Continuous Drain Current (ID) | 180A |
| Gate to Source Voltage (Vgs) | 16V |
| Drain to Source Breakdown Voltage | 100V |
| Nominal Vgs | 2.5 V |
IRLS4030TRLPBF Description
IRLS4030TRLPBF is a 100V Single N-Channel HEXFET Power MOSFET. The Infineon IRLS4030TRLPBF is optimized for Logic Level Drive and broadest availability from distribution partners. The Power MOSFET IRLS4030TRLPBF can be applied in DC Motor Drive, High-Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply, High-Speed Power Switching, and Hard Switched and High-Frequency Circuits. The IRLS4030TRLPBF is offered in the D2-Pak package. It is specified for operation from –55°C to +175°C.
IRLS4030TRLPBF Features
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Logic level: Optimized for 10 V gate-drive voltage (called normal level), and capable of being driven at 4.5 V gate-drive voltage
Industry-standard surface-mount power package
High-current carrying capability package (up to 195 A, die-size dependent)
Capable of being wave-soldered
IRLS4030TRLPBF Applications
DC Motor Drive
High-Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High-Speed Power Switching
Hard Switched and High-Frequency Circuits
