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ContactIRLS3813PBF
MOSFET (Metal Oxide) N-Channel Tube 1.95m Ω @ 148A, 10V ±20V 8020pF @ 25V 83nC @ 4.5V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Manufacturer: Infineon Technologies
- NO: 376-IRLS3813PBF
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 7430
- Description: MOSFET (Metal Oxide) N-Channel Tube 1.95m Ω @ 148A, 10V ±20V 8020pF @ 25V 83nC @ 4.5V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Weight | 3.949996g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | HEXFET® |
| Published | 2014 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 1.95Ohm |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 195W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 32 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.95m Ω @ 148A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 150μA |
| Input Capacitance (Ciss) (Max) @ Vds | 8020pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 160A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 83nC @ 4.5V |
| Rise Time | 202ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 102 ns |
| Turn-Off Delay Time | 33 ns |
| Continuous Drain Current (ID) | 160A |
| Gate to Source Voltage (Vgs) | 20V |
| Pulsed Drain Current-Max (IDM) | 850A |
| DS Breakdown Voltage-Min | 30V |
| RoHS Status | ROHS3 Compliant |
