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ContactIRLR3636TRPBF
IRLR3636TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRLR3636TRPBF
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 1074
- Description: IRLR3636TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Voltage | 60V |
| Power Dissipation-Max | 143W Tc |
| Element Configuration | Single |
| Current | 50A |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 143W |
| Case Connection | DRAIN |
| Turn On Delay Time | 45 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6.8m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3779pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 50A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 49nC @ 4.5V |
| Rise Time | 216ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 69 ns |
| Turn-Off Delay Time | 43 ns |
| Continuous Drain Current (ID) | 99A |
| Threshold Voltage | 2.5V |
| JEDEC-95 Code | TO-252AA |
| Gate to Source Voltage (Vgs) | 16V |
| Drain to Source Breakdown Voltage | 60V |
| Max Junction Temperature (Tj) | 175°C |
| Height | 2.52mm |
| Length | 6.7056mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRLR3636TRPBF Description
IRLR3636TRPBF is a 60V Single N-Channel Power MOSFET. The StrongIRFET? power MOSFET family is optimized for low RDS(on) and high current capability. The Infineon IRLR3636TRPBF is ideal for low-frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET IRLR3636TRPBF is in the TO-252-3 package with 143W power dissipation.
IRLR3636TRPBF Features
Optimized for Logic Level Drive
Very Low RDS(ON) at 4.5V VGS
Superior R*Q at 4.5V VGS
Improved Gate, Avalanche, and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
IRLR3636TRPBF Applications
DC Motor Drive
High-Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High-Speed Power Switching
Hard Switched and High-Frequency Circuits
