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IRLMS2002TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRLMS2002TRPBF
- Package: SOT-23-6
- Datasheet:
- Stock: 4354
- Description: IRLMS2002TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 300mOhm |
| Additional Feature | ULTRA-LOW RESISTANCE |
| Voltage - Rated DC | 20V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 6.5A |
| JESD-30 Code | R-PDSO-G6 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 8.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 30m Ω @ 6.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1310pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 5V |
| Rise Time | 11ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 36 ns |
| Continuous Drain Current (ID) | 6.5A |
| Threshold Voltage | 1.2V |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| Pulsed Drain Current-Max (IDM) | 20A |
| Nominal Vgs | 1.2 V |
| Height | 1.143mm |
| Length | 2.9972mm |
| Width | 1.75mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRLMS2002TRPBF Description
These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The Micro6? package with its customized leadframe produces a HEXFET? power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
IRLMS2002TRPBF Features
Ultra Low On-Resistance
N-Channel MOSFET
Surface Mount
Available in Tape & Reel
2.5V Rated
Lead-Free
ROHS3 Compliant
No SVHC
IRLMS2002TRPBF Applications
Switching Application
New Energy Vehicle
Photovoltaic Generation
Wind Power Generation
Smart Grid
