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ContactIRLMS2002GTRPBF
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 30mOhm @ 6.5A, 4.5V ±12V 1310pF @ 15V 22nC @ 5V 20V SOT-23-6
- Manufacturer: Infineon Technologies
- NO: 376-IRLMS2002GTRPBF
- Package: SOT-23-6
- Datasheet:
- Stock: 11828
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 30mOhm @ 6.5A, 4.5V ±12V 1310pF @ 15V 22nC @ 5V 20V SOT-23-6 (Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 |
| Number of Pins | 6 |
| Supplier Device Package | Micro6™(SOT23-6) |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | HEXFET® |
| Published | 2005 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 2W Ta |
| Element Configuration | Single |
| Power Dissipation | 2W |
| Turn On Delay Time | 8.5 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1310pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 5V |
| Rise Time | 11ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 36 ns |
| Continuous Drain Current (ID) | 6.5A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| Input Capacitance | 1.31nF |
| Drain to Source Resistance | 30mOhm |
| Rds On Max | 30 mΩ |
| Height | 1.2954mm |
| Length | 2.9972mm |
| Width | 1.75mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
