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ContactIRLML5203GTRPBF
-30V TO-236-3
- Manufacturer: Infineon
- NO: 9152-IRLML5203GTRPBF
- Package: TO-236-3
- Datasheet:
- Stock: 4864
- Description: -30V TO-236-3 (Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Mount | Surface Mount |
| Package / Case | TO-236-3 |
| Number of Pins | 3 |
| Published | 2003 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 98MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Subcategory | Other Transistors |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.25W |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.25W |
| Turn On Delay Time | 12 ns |
| Voltage - Threshold | -2.5V |
| Transistor Application | SWITCHING |
| Rise Time | 8.2ns |
| Drain to Source Voltage (Vdss) | -30V |
| Polarity/Channel Type | P-CHANNEL |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 88 ns |
| Continuous Drain Current (ID) | -3A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 3A |
| Drain to Source Breakdown Voltage | -30V |
| Pulsed Drain Current-Max (IDM) | 24A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| Drain to Source Resistance | 98mOhm |
| Rds On Max | 98 mΩ |
| Capacitance - Input | 510pF |
| Height | 1.12mm |
| Length | 3.0226mm |
| Width | 1.397mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
