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IRLML0100TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRLML0100TRPBF
- Package: TO-236-3, SC-59, SOT-23-3
- Datasheet:
- Stock: 5450
- Description: IRLML0100TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 220MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.3W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.3W |
| Turn On Delay Time | 2.2 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 220m Ω @ 1.6A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 4.5V |
| Rise Time | 2.1ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 3.6 ns |
| Turn-Off Delay Time | 9 ns |
| Continuous Drain Current (ID) | 1.6A |
| Threshold Voltage | 2.5V |
| Gate to Source Voltage (Vgs) | 16V |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 7A |
| Recovery Time | 30 ns |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | 2.5 V |
| Height | 1.12mm |
| Length | 3.0226mm |
| Width | 1.397mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRLML0100TRPBF Description
The IRLML0100TRPBF is an N-channel HEXFET? Power MOSFET for load/system switch. The StrongIRFET? power MOSFET IRLML0100TRPBF is optimized for low RDS(on) and high current capability. The IRLML0100TRPBF is ideal for low-frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. The IRLML0100TRPBF is offered in the SOT-23-3 package. It is specified for operation from –55°C to +150°C.
IRLML0100TRPBF Features
Industry-standard surface-mount power package
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
In the SOT-23-3 package
IRLML0100TRPBF Applications
Battery protection
SMPS
DC switch
Load switch
Inverters
