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ContactIRLL2705TRPBF
IRLL2705TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRLL2705TRPBF
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 4899
- Description: IRLL2705TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 40mOhm |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Voltage - Rated DC | 55V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 3.8A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 6.2 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 40m Ω @ 3.8A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
| Rise Time | 12ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 22 ns |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | 3.8A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 16V |
| Drain Current-Max (Abs) (ID) | 5.2A |
| Drain to Source Breakdown Voltage | 55V |
| Dual Supply Voltage | 55V |
| Recovery Time | 88 ns |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | 2 V |
| Height | 1.8mm |
| Length | 6.6802mm |
| Width | 6.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRLL2705TRPBF Description
The IRLL2705TRPBF is a HEXFET? fifth generation single N-channel Power MOSFET utilizing advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation. The package is designed for surface-mount using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1W is possible in a typical surface-mount application.
IRLL2705TRPBF Features
Dynamic dV/dt rating
Logic level gate drive
Ease of paralleling
Advanced process technology
Low static drain-to-source ON-resistance
IRLL2705TRPBF Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
