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ContactIRLL024ZTRPBF
IRLL024ZTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRLL024ZTRPBF
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 5625
- Description: IRLL024ZTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 60MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.8W |
| Case Connection | DRAIN |
| Turn On Delay Time | 8.6 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 60m Ω @ 3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 5V |
| Rise Time | 33ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 5A |
| Gate to Source Voltage (Vgs) | 16V |
| Drain Current-Max (Abs) (ID) | 5A |
| Drain to Source Breakdown Voltage | 55V |
| Pulsed Drain Current-Max (IDM) | 40A |
| Height | 1.4478mm |
| Length | 6.6802mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRLL024ZTRPBF Description
IRLL024ZTRPBF, manufactured by Infineon Technologies. It's category belong to Electronic Components ICs. To achieve exceptionally low on-resistance per silicon area, the IRLL024ZTRPBF HEXFET? Power MOSFET employs the most advanced processing techniques. A 150°C junction operating temperature, quick switching speed, and increased repeating avalanche rating are all included in this design. These characteristics combine to make this design a highly efficient and dependable device that may be used in a wide range of applications.
IRLL024ZTRPBF Features
Lead-Free
Fast Switching
Ultra Low On-Resistance
Advanced Process Technology
150°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
IRLL024ZTRPBF Applications
Lighting
Automotive Body electronics
Communications equipment
Wireless infrastructure
Industrial Pro audio, video & signage
