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ContactIRLL024NTRPBF
IRLL024NTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRLL024NTRPBF
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 4785
- Description: IRLL024NTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Manufacturer Package Identifier | IRLL024NTRPBF |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1999 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 65mOhm |
| Additional Feature | AVALANCHE RATED, ULTRA LOW RESISTANCE |
| Voltage - Rated DC | 55V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 3.1A |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7.4 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 65m Ω @ 3.1A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 510pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 15.6nC @ 5V |
| Rise Time | 21ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 25 ns |
| Turn-Off Delay Time | 18 ns |
| Continuous Drain Current (ID) | 3.1A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 16V |
| Drain to Source Breakdown Voltage | 55V |
| Dual Supply Voltage | 55V |
| Recovery Time | 58 ns |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | 2 V |
| Height | 1.8mm |
| Length | 6.6802mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
Description
A HEXFET? Power MOSFET is the IRLL024NTRPBF. Advanced processing techniques are used in Fifth Generation HEXFETs to obtain extraordinarily low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications.
The SOT-223 is a surface-mount package that may be soldered using vapor phase, infrared, or wave soldering processes. Its one-of-a-kind package design enables for effortless automatic pick-and-place, just like other SOT or SOIC packages, but with the extra benefit of increased thermal performance thanks to an expanded heat sinking tab. In a typical surface mount application, the power dissipation of 1.0W is attainable.
Features
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● Fully Avalanche Rated
● Fast Switching
● Surface Mount
● Advanced Process Technology
● Lead-Free
Applications
● In various radio and RF applications
● Transportation technology
● Automotive industry
● Power MOSFETs
● Consumer electronics
